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SSM6K25FE

Part Number	SSM6K25FE
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Jul 21, 2010
Detailed Description	SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applicat...
Datasheet	SSM6K25FE PDF File

Overview

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.
8 V) Ron = 190mΩ (max) (@VGS = 2.
5 V) Ron = 145mΩ (max) (@VGS = 4.
0 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 1.
6±0.
05 1.
2±0.
05 0.
2±0.
05 1 6 2 5 1.
6±0.
05 1.
0±0.
05 0.
5 0.
5 Characteristics Symbol Rating Unit 3 4 0.
12±0.
05 0.
55±0.
05 Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V Drain current DC Pulse Drain power dissipation Channel temperature ID 0.
5 A IDP 1.
5 PD 500 mW (Note 1) Tch 150 °C 1,2,5,6 :Drain 3 :G...

Similar Datasheet

SSM6K25FE Silicon N-Channel MOSFET - Toshiba Semiconductor

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