SSM6K211FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
SSM6K211FE
○ High-Speed Switching Applic...
SSM6K211FE
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
SSM6K211FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
1.5-V drive Low ON-resistance:
Ron = 118 mΩ (max) (@VGS = 1.5 V) Ron = 82 mΩ (max) (@VGS = 1.8 V) Ron = 59 mΩ (max) (@VGS = 2.5 V) Ron = 47 mΩ (max) (@VGS = 4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
3.2 A
6.4
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
ES6
1,2, 5, 6: Drain 3: Gate 4: Source
Storage temperature
Tstg
−55 to 150
°C
JEDEC
―
Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA TOSHIBA
― 2-2N1J
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
Weight: 3 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
Equivalent Circuit (top view)
654
654
NQ
...