SSM6K209FE

SSM6K209FE www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K209FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 4.0V drive Low ON-resistance: Ron = 145mΩ (max) (@VGS = 4.0 V) Ron = 74mΩ (max) (@VGS = 10 V) 1.6±0.05 1.0±0.05 0.5 0.5 1 2 3 1.6±0.05 1.2±0.05 UNIT: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ± 20 2.5 5.0 500 150 −55~150 Unit V V 6 5 4 0.2±0.05 Unit V μA μA V S mΩ pF nC ns V 0.55±0.05 mW °C °C 1, 2, 5, 6 : Drain 3 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: ES6 JEDEC JEITA TOSHIBA 4 ― ― 2-2N1A Weight: 3.0 mg (typ.) Electrical Characteristics (Ta = 25°C) C...