SSM6K204FE

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 1.5V drive Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 2.0 A 4.0 Drain power dissipation PD (Note 1) 500 mW Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) ES6 1, 2, 5, 6 : Drain 3 : Gate 4 : Source JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3 mg (typ.) Characteristic Drai...