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SSM6K202FE
Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS SSM6K202FE 1. Applications High-Speed Switching Power Management Switches 2. Features (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gat...
Toshiba Semiconductor
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SSM6K202FE
Silicon N-Channel MOSFET
- Toshiba Semiconductor
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