SSM3K7002BFU

SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC JEITA ― SC-70 reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2E1E operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 6.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm2 × 3) 0.6 mm 1.0 mm Marking 3 NM 1 2 Equivalent Circuit (top view) 3 1 2 Start of commercial pr...