IPI60R125CP

www.DataSheet4U.com IPI60R125CP CoolMOSTM Power Transistor Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 nC PG-TO220 PG-TO262 CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom Type IPI60R125CP Package PG-TO262 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 25 16 82 708 1.2 11 50 ±20 ±30 208 -55 ... 150 W °C A V/ns V mJ Unit A Rev. 2.0 page 1 2007-11-20 www.DataSheet4U.com IPI60R125CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 16 82 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junct...