GA50TS120K

www.DataSheet4U.com ] HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT PRELIMINARY GA50TS120K VCES=1200V VCE(on) typ.=2.5V @VGE=15V,IC=50A Features Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 µs Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing Absolute Maximum Ratings VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC   PD @ TC =85oC   TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Parameter 1200 75 50 100 100 100 ±20 2500 417 217 -40 to +150 -40 to +125 Max. Units V A V W  o C Termal / Mechanical Characteristics RθJC RθJC RθCS Parameter Termal Resistance, Junctio...