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BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 21 June 2010 Objective data sheet...
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BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 21 June 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems HVAC Motors, lamps and solenoid control Start-Stop micro-hybrid applications Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 30 75 158 V A W
Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; Tj = 25 °C; on-state resistance see Figure 5 non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 3.8 4.5 mΩ
Avalanche ruggedness EDS(AL)S 330 mJ
[1]
Continuous current is limited by package.
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NXP Semiconductors
BUK624R5-30C
N-channel TrenchMOS intermediate level FET
2....