BUK624R5-30C

www.DataSheet4U.com BUK624R5-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 June 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ HVAC „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 30 75 158 V A W Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; Tj = 25 °C; on-state resistance see Figure 5 non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 3.8 4.5 mΩ Avalanche ruggedness EDS(AL)S 330 mJ [1] Continuous current is limited by package. www.DataSheet4U.com NXP Semiconductors BUK624R5-30C N-channel TrenchMOS intermediate level FET 2....