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BUK9506-55A; BUK9606-55A; BUK9E06-55A
TrenchMOS™ logic level FET
Rev. 03 — 23 July 2001 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible.
3. Applications
c c
s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g)
mb mb
mb
Simplified outline
Symbol
drain (d) source (s) mounting base, connected to drain (d)
1
MBK106
d
g 2
MBB076
s
3
MBK116
1 2 3
MBK112
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
SOT226 (I2-PAK)
Philips Semiconductors
BUK9506-55A; BUK9606-55A; BUK9E06-55A
www.DataSheet4U.com
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A
[1]
Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
Typ − − − − 5.3 5.5 4.8
Max 55 154 300 175 6.3 6.7 5.8
Unit V A W °C
mΩ mΩ mΩ
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tmb = 25 °C
[1] [2] [1] [2] [2]
Conditions RGS = 20 kΩ
Min − − − − − − − − −55 −55 − − − −
Max 55 55 ±15 154 75 75 616 300 +175 +175 154 75 616 1.1
Unit V V V A A A A W °C °C A A A J
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1
Source-drain diode
Avalanche ruggedness
[1] [2]
Current is limited by power dissipation chip rating Continuous current is limited by package
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
2 of 16
Philips Semiconductors
BUK9506-55A; BUK9606-55A; BUK9E06-55A
www.DataSheet4U.com
03na19
120 Pder
(%) 100
ID 180 (A) 160 140
03ne93
80
120 100
60
80
40
60 40
Capped at 75A due to package
20
20
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
0 25 50 75 100 125 150 175 200 Tj (ºC)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
VGS ≥ 4.5 V ID I der = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A) RDSon = VDS / ID
03nf02
tp = 10 us 102 Capped at 75 A due to package 1 ms D.C. 10
P
100 us
δ=
tp T
10 ms 100 ms
tp T
t
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
3 of 16
Philips Semiconductors
BUK9506-55A; BUK9606-55A; BUK9E06-55A
www.DataSheet4U.com
7. Thermal characteristics
Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; SOT78 and SOT226 packages mounted on printed circuit board; minimum footprint; SOT404 package Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Value 60 50 Unit K/W K/W
0.5
K/W
7.1 Transient thermal impedance
1 Zth(j-mb) (K/W) δ = 0.5 10-1
03nf03
0.2 0.1 0.05 0.02
P
10-2
δ=
tp T
Single Shot
tp t T
10-3 10-6 10-5 10-4 10-3 10-2 10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
4 of 16
Philips Semiconductors
BUK9506-55A; BUK9606-55A; BUK9E06-55A
www.DataSheet4U.com
8. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-s.