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BUK9506-55A Dataheets PDF



Part Number BUK9506-55A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description TrenchMOS logic level FET
Datasheet BUK9506-55A DatasheetBUK9506-55A Datasheet (PDF)

www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.

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www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) mb mb mb Simplified outline Symbol drain (d) source (s) mounting base, connected to drain (d) 1 MBK106 d g 2 MBB076 s 3 MBK116 1 2 3 MBK112 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) SOT226 (I2-PAK) Philips Semiconductors BUK9506-55A; BUK9606-55A; BUK9E06-55A www.DataSheet4U.com 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ − − − − 5.3 5.5 4.8 Max 55 154 300 175 6.3 6.7 5.8 Unit V A W °C mΩ mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tmb = 25 °C [1] [2] [1] [2] [2] Conditions RGS = 20 kΩ Min − − − − − − − − −55 −55 − − − − Max 55 55 ±15 154 75 75 616 300 +175 +175 154 75 616 1.1 Unit V V V A A A A W °C °C A A A J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness [1] [2] Current is limited by power dissipation chip rating Continuous current is limited by package 9397 750 08416 © Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 03 — 23 July 2001 2 of 16 Philips Semiconductors BUK9506-55A; BUK9606-55A; BUK9E06-55A www.DataSheet4U.com 03na19 120 Pder (%) 100 ID 180 (A) 160 140 03ne93 80 120 100 60 80 40 60 40 Capped at 75A due to package 20 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) 0 25 50 75 100 125 150 175 200 Tj (ºC) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 4.5 V ID I der = ------------------ × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 ID (A) RDSon = VDS / ID 03nf02 tp = 10 us 102 Capped at 75 A due to package 1 ms D.C. 10 P 100 us δ= tp T 10 ms 100 ms tp T t 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08416 © Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 03 — 23 July 2001 3 of 16 Philips Semiconductors BUK9506-55A; BUK9606-55A; BUK9E06-55A www.DataSheet4U.com 7. Thermal characteristics Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; SOT78 and SOT226 packages mounted on printed circuit board; minimum footprint; SOT404 package Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Value 60 50 Unit K/W K/W 0.5 K/W 7.1 Transient thermal impedance 1 Zth(j-mb) (K/W) δ = 0.5 10-1 03nf03 0.2 0.1 0.05 0.02 P 10-2 δ= tp T Single Shot tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08416 © Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 03 — 23 July 2001 4 of 16 Philips Semiconductors BUK9506-55A; BUK9606-55A; BUK9E06-55A www.DataSheet4U.com 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-s.


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