BUK763R6-40C

www.DataSheet4U.com BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Avalanche robust  Suitable for standard level gate drive  Suitable for thermally demanding environment up to 175°C rating 1.3 Applications  12V Motor, lamp and solenoid loads  High performance automotive power systems  High performance Pulse Width Modulation (PWM) applications www.DataSheet4U.com NXP Semiconductors BUK763R6-40C N-channel TrenchMOS standard level FET 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 100 203 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 3 3.6 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 100 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V...