BUK9832-55A

BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources 1.3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 150 °C voltage ID drain current VGS = 5 V; Tsp = 25 °C; see Figure 1; see Figure 3 Ptot total power Tsp = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 8 A; Tj = 25 °C VGS = 10 V; ID = 8 A; Tj = 25 °C VGS = 5 V; ID = 8 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 10 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 55 V - - 12 A - - 8W - - 36 mΩ - 25 29 mΩ - 27 32 mΩ - - 100 mJ NXP Semiconductors BUK9832-55A N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Descrip...