PSMN5R8-30LL

www.DataSheet4U.com PSMN5R8-30LL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Small footprint for compact designs  Suitable for logic level gate drive sources 1.3 Applications  Battery protection  DC-to-DC converters  Load switching  Power ORing 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max Unit 30 40 55 150 V A W °C Static characteristics RDSon 7.2 5 8.8 7.7 5.8 mΩ mΩ mΩ www.DataSheet4U.com NXP Semiconductors PSMN5R8-30LL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Quick reference data …continued Parameter Conditions Min Typ 3.4 Max Unit nC nC nC Table 1. Symbol QGD QG(tot) Dynamic characteristics gate-drain charge VGS = 10 V; ID = 15 A; total gate charge VDS = 15 V; ...