BLF7G20LS-200

www.DataSheet4U.com BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 IDq (mA) 1620 VDS (V) 28 PL(AV) (W) 55 Gp (dB) 18 ηD (%) 33 ACPR (dBc) −29[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.2 Features and benefits „ „ „ „ „ „ „ „ „ Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi-carrier applications in the 1805 MHz to 1990 MHz frequency range www.DataSheet4U.com NXP Semiconductors BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF7G20L-200 (SOT502A) 1 3 2 2 3 sym1...