BUK9C10-65BIT

www.DataSheet4U.com BUK9C10-65BIT N-channel TrenchPLUS logic level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits  AEC-Q101 compliant  Low conduction losses due to low on-state resistance 1.3 Applications  Lamp switching  Motor drive systems  Power distribution  Solenoid drivers 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 12 Tj = 25 °C; VGS = 5 V; see Figure 14 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 8.5 Max Unit 10 mΩ Static characteristics ID/Isense 8094 8993 9892 A/A V(BR)DSS 65 - - V www.DataSheet4U.com NXP Semiconductors BUK9C10-65BIT N-channel TrenchPLUS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 mb Pinning information Symbol Description G IS A D K KS S D gate current sense anode drain cathode Kelvin source source mb 4 123 567 G IS S KS C 003aad829 Simplified outline mb Graphic symbol D A SOT427 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK9C10-65BIT D2PAK De...