D1415A

2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC ICP IB PC 120 V 100 V 6V 7 A 10 0.7 A 2.0 W 25 JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD1415A Characteristics Collector c...