MRF6V3090NR1

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 22.0 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — --62.0 dBc @ 4 kHz Bandwidth Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Input Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Excellent Thermal Stability Greater Negative Gate--Source Voltage Range for Improved Class C Operation 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 470-860 MHz, 90 W, 50 V LATERAL N-CHANNEL SINGLE-ENDED BROADBAND RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6V3090NR1(NR5) CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6V3090NBR1(NBR5) PARTS ARE SINGLE-ENDED Table 1. Maximum Ratings Rating Drain--So...