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STP5NK80ZFP-H Dataheets PDF



Part Number STP5NK80ZFP-H
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description TO-220FP Zener-protected SuperMESH Power MOSFET
Datasheet STP5NK80ZFP-H DatasheetSTP5NK80ZFP-H Datasheet (PDF)

www.DataSheet4U.com STP5NK80ZFP-H N-channel 800 V, 1.9 Ω, 4.3 A, TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type STP5NK80ZFP-H ■ ■ ■ ■ VDSS (@Tjmax) 800 V RDS(on) max < 2.4 Ω ID 4.3 A 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Very good manufacturing repeatability 1 3 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well.

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www.DataSheet4U.com STP5NK80ZFP-H N-channel 800 V, 1.9 Ω, 4.3 A, TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type STP5NK80ZFP-H ■ ■ ■ ■ VDSS (@Tjmax) 800 V RDS(on) max < 2.4 Ω ID 4.3 A 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Very good manufacturing repeatability 1 3 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Table 1. Device summary Marking P5NK80ZFP-H Package TO-220FP Packaging Tube Order code STP5NK80ZFP-H Note: Meets ECOPACK2® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. April 2010 Doc ID 17372 Rev 1 1/13 www.st.com 13 www.DataSheet4U.com Contents STP5NK80ZFP-H Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 17372 Rev 1 www.DataSheet4U.com STP5NK80ZFP-H Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM(2) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 800 ± 30 4.3 (1) 2.7 (1) 17.2 (1) 30 0.24 3500 4.5 2500 Unit V V A A A W W/°C V V/ns V VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 °C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 4.3 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX. Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 4.2 Unit °C/W Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD= 50 V) Value 4.3 190 Unit A mJ Doc ID 17372 Rev 1 3/13 www.DataSheet4U.com Electrical characteristics STP5NK80ZFP-H 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125 °C Min. 800 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω Gate body leakage current VGS = ± 20 V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100 µA VGS = 10 V, ID = 2.15 A 3 3.75 1.9 4.5 2.4 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tr Qg Qgs Qgd td(Voff) tr Dynamic Parameter Test conditions Min. Typ. 4.25 910 98 20 40 18 25 45 30 32.4 5 18.5 22 10 32 45.5 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC ns ns ns Forward transconductance VDS =15 V, ID = 2.15 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-on delay time fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time VDS = 25 V, f=1 MHz, VGS=0 - VGS=0, VDS =0 to 400 V VDD= 400 V, ID= 2 A, RG=4.7 Ω, VGS=10 V (see Figure 17) VDD=640 V, ID = 4.3 A VGS =10 V VDD=640 V, ID= 4.3 A, RG=4.7 Ω, VGS=10 V (see Figure 20) - - - - 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/13 Doc ID 17372 Rev 1 www.DataSheet4U.com STP5NK80ZFP-H Electrical characteristics Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.3 A, VGS=0 ISD= 4.3 A, di/dt = 100 A/µs, VDD=40 V, Tj = 150 °C (see Figure 20) 500 3 12 17.2 1.6 A V ns µC A Test conditions Min Typ. Max 4.3 Unit A trr Qrr .


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