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STP5NK80ZFP-H
N-channel 800 V, 1.9 Ω, 4.3 A, TO-220FP Zener-protected SuperMESH™ Power MOSFET
Features
Type STP5NK80ZFP-H
■ ■ ■ ■
VDSS (@Tjmax) 800 V
RDS(on) max < 2.4 Ω
ID 4.3 A
100% avalanche tested Gate charge minimized Very low intrinsic capacitance Very good manufacturing repeatability
1 3 2
TO-220FP
Application
■
Switching applications Figure 1. Internal schematic diagram
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
Table 1.
Device summary
Marking P5NK80ZFP-H Package TO-220FP Packaging Tube
Order code STP5NK80ZFP-H
Note:
Meets ECOPACK2® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”.
April 2010
Doc ID 17372 Rev 1
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Contents
STP5NK80ZFP-H
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STP5NK80ZFP-H
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM(2) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 800 ± 30 4.3 (1) 2.7 (1) 17.2 (1) 30 0.24 3500 4.5 2500 Unit V V A A A W W/°C V V/ns V
VESD(G-S) dv/dt (3) VISO TJ Tstg
Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 °C) Operating junction temperature Storage temperature
-55 to 150
°C
1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 4.3 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value 4.2 Unit °C/W
Table 4.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD= 50 V) Value 4.3 190 Unit A mJ
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Electrical characteristics
STP5NK80ZFP-H
2
Electrical characteristics
(TCASE= 25 °C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125 °C Min. 800 1 50
±10
Typ.
Max.
Unit V µA µA µA V Ω
Gate body leakage current VGS = ± 20 V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100 µA VGS = 10 V, ID = 2.15 A 3 3.75 1.9
4.5 2.4
Table 6.
Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tr Qg Qgs Qgd td(Voff) tr
Dynamic
Parameter Test conditions Min. Typ. 4.25 910 98 20 40 18 25 45 30 32.4 5 18.5 22 10 32 45.5 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC ns ns ns
Forward transconductance VDS =15 V, ID = 2.15 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-on delay time fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time
VDS = 25 V, f=1 MHz, VGS=0
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VGS=0, VDS =0 to 400 V VDD= 400 V, ID= 2 A, RG=4.7 Ω, VGS=10 V (see Figure 17) VDD=640 V, ID = 4.3 A VGS =10 V VDD=640 V, ID= 4.3 A, RG=4.7 Ω, VGS=10 V (see Figure 20)
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-
-
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1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STP5NK80ZFP-H
Electrical characteristics
Table 7.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.3 A, VGS=0 ISD= 4.3 A, di/dt = 100 A/µs, VDD=40 V, Tj = 150 °C (see Figure 20) 500 3 12 17.2 1.6 A V ns µC A Test conditions Min Typ. Max 4.3 Unit A
trr Qrr .