NDP10N62Z

www.DataSheet4U.com NDF10N62Z, NDP10N62Z N-Channel Power MOSFET 620 V, 0.65 W Features Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com VDSS 620 V RDS(ON) (TYP) @ 5 A 0.65 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 36 ±30 300 3900 NDF10N62Z NDP10N62Z Unit V A A G (1) 36 (Note 2) 125 A W V mJ V V NDF10N62ZG or NDP10N62ZG AYWW Gate TO−220AB CASE 221A STYLE 5 Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package Source S (3) N−Channel D (2) 620 (Note 1) 10 (Note 2) 5.7 (Note 2) TO−220FP CASE 221D STYLE 1 MARKING DIAGRAM dv/dt IS TL TJ, Tstg 4.5 (Note 3) 10 260 − 55 to 150 V/ns A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Ope...