NDF06N62Z

NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF06N62Z Unit Drain−to−Source Voltage Continuous Drain Current RqJC (Note 1) Continuous Drain Current RqJC, TA = 100°C (Note 1) Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A VDSS ID ID IDM PD VGS EAS 620 V 6.0 A 3.8 A 20 A 31 W ±30 V 113 mJ ESD (HBM) (JESD 22−A114) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery (Note 2) VISO 4500 V dv/dt 4.5 V/ns Continuous Source Current (Body Diode) IS Maximum Temperature for TL Soldering Leads 6.0 A 260 °C Operating Junction and Storage Temperature Range TJ, Tstg − 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C http://onsemi.com VDSS 620 V RDS(ON) (MAX) @ 3 A 1.2 W N−Channel D (2) G (1) TO−220FP CASE 221D STYLE 1 MARKING DIAGRAM...