NDF04N62Z

NDF04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 2.0 W Features Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS 620 V ID 4.4 4.1 A (Note 2) Continuous Drain Current RqJC, TA = 100°C ID 2.8 2.6 A (Note 2) Pulsed Drain Current, VGS @ 10V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) IDM 18 16 A (Note 2) PD 28 83 W VGS ±30 V EAS 120 mJ Vesd 3000 V VISO 4500 − V Peak Diode Recovery dv/dt 4.5 (Note 3) V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s TL TPKG 300 °C 260 Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. L...