MAT12

Data Sheet FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz Audio, Dual-Matched NPN Transistor MAT12 PIN CONFIGURATION C1 1 6 C2 B1 2 5 B2 E1 3 4 E2 NOTE 1. SUBSTRATE IS CONNECTED TO CASE ON TO-78 PACKAGE. 2. SUBSTRATE IS NORMALLY CONNECTED TO THE MOST NEGATIVE CIRCUIT POTENTIAL, BUT CAN BE FLOATED. Figure 1. 6-Lead TO-78 09044-001 GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signalto-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 μV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction. The MAT12 is also an ideal choice for...