Freescale Semiconductor Technical Data
Document Number: MRF8S19140H www.DataSheet4U.com Rev. 0, 5/2010
RF Power Field ...
Freescale Semiconductor Technical Data
Document Number: MRF8S19140H www.DataSheet4U.com Rev. 0, 5/2010
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 1930 MHz 1960 MHz 1990 MHz Gps (dB) 18.8 19.1 19.3 ηD (%) 31.7 31.4 31.5 Output PAR (dB) 6.4 6.5 6.5 ACPR (dBc) --38.5 --38.8 --38.8
MRF8S19140HR3 MRF8S19140HSR3
1930-1990 MHz, 34 W AVG., 28 V CDMA, W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 1 dB Compression Point ≃ 138 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm...