STP4N62K3

www.DataSheet4U.com STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3 ■ ■ ■ ■ ■ ■ VDSS RDS(on) max ID Pw 70 W 25 W 70 W 70 W 1 3 1 2 3 620 V < 1.95 Ω D²PAK 3.8 A TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1. I²PAK 3 12 1 2 TO-220 Application ■ Internal schematic diagram D(2) Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Marking Package D²PAK TO-220FP I²PAK TO-220 Packaging Tape and reel Tube Tube Tube G(1) S(3) AM01476v1 Order codes STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3 4N62K3 May 2010 Doc ID 17548 Rev 1 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STB/F/I/P4N62K3 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . ...