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STH260N6F6-2 STP260N6F6
N-channel 60 V, 0.0016 Ω, 180 A TO-220, H2PAK-2 STripFET™ DeepGATE™ VI Power MOSFET
Preliminary data
Features
Type STH260N6F6-2 STP260N6F6
■ ■ ■ ■
VDSS 60 V 60 V
RDS(on) max < 0.002 Ω < 0.003 Ω
ID 180 A 120 A
3 1
3
N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance
2
2
H2PAK-2 TO-220
1
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
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Table 1.
Device summary
Marking 260N6F6 260N6F6 Package H2PAK-2 TO-220 Packaging Tape and reel Tube
Order code STH260N6F6-2 STP260N6F6
May 2010
Doc ID 17467 Rev 1
1/12
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
STH260N6F6-2, STP260N6F6
Contents
1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STH260N6F6-2, STP260N6F6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Value Parameter TO-220 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor 1 TBD – 55 to 175 Operating junction temperature 120 134 480 300 0.8 75 ± 20 180 170 720 H2PAK-2 Unit V V A A A W W/°C mJ °C
PTOT
(2)
EAS
Single pulse avalanche energy Storage temperature
Tstg Tj
1. Current limited by package. 2. Starting Tj = 25 °C, ID= 35 A, VDD= 50 V.
Table 3.
Symbol Rthj-case Rthj-a Rthj-pcb(1) Tl
Thermal data
Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 300 62.5 35 0.5 H2PAK-2 Unit °C/W °C/W °C/W °C
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
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Electrical characteristics
STH260N6F6-2, STP260N6F6
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th)
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 µA, VGS = 0 VDS = max rating VDS = max rating,TC=125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA For VGS = 10 V, ID = 90 A For TO-220 VGS = 10 V, ID = 60 A H2PAK-2 2 1.6 2.4 Min. 60 1 100 100 4 2 mΩ 3 Typ. Max. Unit V µA µA nA V
RDS(on)
Static drain-source on resistance
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 25 V, f = 1 MHz, VGS = 0 Test conditions Min. Typ. 10500 780 440 VDD = 30 V, ID = 120 A, VGS = 10 V (see Figure 3) 150 TBD TBD Max. Unit pF pF pF nC nC nC
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 60 A RG = 4.7 Ω VGS = 10 V (see Figure 2) Min. Typ. TBD TBD TBD TBD Max. Unit ns ns ns ns
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STH260N6F6-2, STP260N6F6
Electrical characteristics
Table 7.
Symbol ISD ISDM (1)
Source drain diode
Parameter Source-drain current Test conditions For TO-220 For H PAK-2 TO-220 Source-drain current (pulsed) H2PAK-2 For TO-220 ISD = 120 A, VGS = 0 For H2PAK-2 ISD = 180 A, VGS = 0 ISD = 120 A, VDD = 60 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 4)
2
Min. -
Typ.
Max 120 180 480 720
Unit A A A A
VSD (2)
Forward on voltage
-
TBD
V
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
-
TBD TBD TBD
ns nC A
1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Test circuits
STH260N6F6-2, STP260N6F6
3
Figure 2.
Test circuits
Switching times test circuit for resistive load Figure 3. Gate charge test circuit
VDD 12V
2200
47kΩ 100nF
1kΩ
RL VGS VD RG PW D.U.T.
μF
3.3 μF
VDD Vi=20V=VGMAX
2200 μF
IG=CONST 2.7kΩ 47kΩ PW 1kΩ
100Ω
D.U.T. VG
AM01468v1
AM01469v1
Figure 4.
Test circuit for inductive load Figure 5. switchi.