Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Description
FDFME2P823ZT Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFME2P823ZT
July 2010
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -2.6 A, 142 mΩ
Features
General Description
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID ...
