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BLF7G22L-250P

NXP
Part Number BLF7G22L-250P
Manufacturer NXP
Description Power LDMOS transistor
Published Jun 29, 2010
Detailed Description www.DataSheet4U.com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 Objective data sheet 1. ...
Datasheet PDF File BLF7G22L-250P PDF File

BLF7G22L-250P
BLF7G22L-250P

Overview
www.
DataSheet4U.
com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev.
01 — 6 May 2010 Objective data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18 ηD (%) 30 ACPR (dBc) −28[1] Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits „ „ „ „ „ „ „ „ „ Excellent ruggedness High efficiency ...


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