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BIPOLARICS, INC.
Part Number BPT1819E03
NPN SILICON MICROWAVE POWER TRANSISTORS
PRODUCT DATA SHEE...
www.DataSheet4U.com
BIPOLARICS, INC.
Part Number BPT1819E03
NPN SILICON MICROWAVE POWER
TRANSISTORS
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' BPT1819E03 is a high performance silicon bipolar
transistor intended for linear power applications at frequencies of 1.8 to 1.9 GHz. Typical applications include amplifiers in aeronautical, maritime and personal communication applications. The BPT1819E03 is bonded common emitter for linear applications. Linear output power of 3 Watts can be achieved. BeO flange packaging makes this device excellent for industrial and military products. Uniformity and reliability are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization.
High Output Power 3 W @ 1.8 GHz High Gain Bandwidth Product f = 6.0 GHz typ @ I C = 480 mA t High Gain GPE = 10.0 dB @ 1.8 GHz Gold Metallization System High thermal efficiency BeO 6 Lead Flange package (package 36)
Absolute Maximum Ratings:
SYMBOL PARAMETERS RATING UNITS
PERFORMANCE DATA: Electrical Characteristics (TA = 25oC)
SYMBOL PARAMETERS & CONDITIONS
VCES VCEO VEBO IC T J TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Thermal Resistance
40 20 3.0 960 200 -65 to 200 11
V V V mA o C o C C/W
θJC
UNIT
MIN.
TYP.
MAX.
VCE = 15V, I C = 480 mA, Class A,Common Emitter unless stated
BVCEO
Collector-Emitter Breakdown Voltage
IC = 0...