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PMGD400UN
Dual N-channel µTrenchMOS™ ultra low level FET
MBD128
Rev. 01 — 3 March 2004
Product da...
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PMGD400UN
Dual N-channel µTrenchMOS™ ultra low level FET
MBD128
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 0.41 W s ID ≤ 0.71 A s RDSon ≤ 480 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1)
s1 1 Top view 2 3
MSA370
Simplified outline
6 5 4
Symbol
d1 d2
g1
s2
g2
MSD901
SOT363 (SC-88)
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Philips Semiconductors
PMGD400UN
Dual N-channel µTrenchMOS™ ultra low level FET
3. Ordering information
Table 2: Ordering information Package Name PMGD400UN SC-88 Description Plastic surface mounted package; 6 leads Version SOT363 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM
[1]
Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Fig...