HFS11N40

www.DataSheet4U.com HFS11N40 Dec 2005 BVDSS = 400 V HFS11N40 400V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 400 11.4* 7.2* 45.6* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 520 11.4 14.7 4.5 50 0.4 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 2.5 62.5 ℃/W Units ◎ SEMIHOW REV.A0,Dec 2005 www.DataSheet4U.com HFS11N40 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specifi...