BUJD105AD

BUJD105AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC converters „ Electronic lighting ballasts „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. IC Ptot VCESM Quick reference Conditions Tmb ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max 8 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter Static characteristics hFE VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 8 13.5 - NXP Semiconductors BUJD105AD NPN power transistor with integrated diode www.DataSheet4U.com 2. Pinning information Table 2. Pin 1 2 3 mb B C E C Pinning information Symbol Description base collector emitter mounting base; connected to collector 2 1 3 Simplified outline [1] mb Graphic symbol C B E sym131 SOT428 (SC-63; DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package. 3. Ordering information Table 3. Ordering information Package Name BUJD105AD SC-63; DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Versio...