BUJD103AD

BUJD103AD NPN power transistor with integrated diode Rev. 02 — 6 October 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Integrated anti-parallel E-C diode „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC converters „ Electronic lighting ballasts „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. IC Ptot VCESM Quick reference Conditions see Figure 4Tmb ≤ 25 °C VBE = 0 V Min Typ Max 4 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter Static characteristics hFE IC = 500 mA; VCE = 5 V; see Figure 12Tj = 25 °C VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 12 13 22 12.5 32 - NXP Semiconductors BUJD103AD NPN power transistor with integrated diode www.DataSheet4U.com 2. Pinning information Table 2. Pin 1 2 3 B C E Pinning information Symbol Description base collector emitter [1] Simplified outline mb Graphic symbol C B E 2 1 3 sym131 SOT428 (DPAK) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 3. Ordering information Table 3. Ordering information Package Name BUJD103AD DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (o...