BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 01 — 11 November 2008
www.DataSheet4U.com
Product data sh...
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS
transistor
Rev. 01 — 11 November 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power
transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1]
[1] [2]
f (MHz) 3400 to 3600
VDS PL(AV) (V) 28 (W) 18.5
PL(p) Gp (W) 130 13
ηD
ACPR885k (dBc)
ACPR1980k (dBc) −65[2]
(dB) (%)
21.5 −47.5[2]
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directiv...