BLF6G38-10

BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 14 ηD (%) 20 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G38...