BLF6G22LS-130

BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 30 Gp (dB) 17 ηD (%) 28.5 IMD3 (dBc) −37[1] ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 1100 mA: N Average output power = 30 W N Power gain = 17 dB (typ) N Efficiency = 28.5 % N IMD3 = −37 dBc N ACPR = −40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor www.DataSheet4U.com 1.3 Applications I RF power amplifiers W-CDMA base stations and multi carrier applications in the 2000 ...