M30W0R6500T0

www.DataSheet4U.com M30W0R6500T0 96 Mbit (64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories) 1.8V Supply, Multi-Chip Package FEATURES SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE – VDDF1 = VDDF2 = VDDQ = 1.7 to 2.2V – VPP = 12V for fast Program (optional) LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – 64Mb Device Code (Top Configuration): 8810h – 32Mb Device Code (Top Configuration): 8814h PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions Figure 1. Packages FBGA Stacked LFBGA88 (ZA) 8 x 10mm FLASH MEMORY ■ SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns ■ PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options ■ ARCHITECTURE – 64Mbit and 32Mbit Flash memories – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top location) ■ DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations ■ ■ ■ ■ BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK Decembe...