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BUJ105AD

NXP

Silicon diffused power transistor

BUJ105AD Silicon diffused power transistor Rev. 01 — 14 December 2004 www.DataSheet4U.com Product data sheet 1. Produ...


NXP

BUJ105AD

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Description
BUJ105AD Silicon diffused power transistor Rev. 01 — 14 December 2004 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features s Low thermal resistance s Fast switching 1.3 Applications s Electronic lighting ballast s Inverters s DC-to-DC converters s Motor control systems 1.4 Quick reference data s VCESM ≤ 700 V s Ptot ≤ 80 W s IC ≤ 8 A s hFEsat = 11 (typ) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector 2 1 3 1 3 sym056 Simplified outline [1] Symbol mb 2 SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. Philips Semiconductors BUJ105AD www.DataSheet4U.com Silicon diffused power transistor 3. Ordering information Table 2: Ordering information Package Name BUJ105AD D-PAK Description Version plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Parameter peak collector-emitter voltage collector-emitter voltage collector-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation storage temperature junction temperature Tmb = ≤ 25 °...




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