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Si7444DP Dataheets PDF



Part Number Si7444DP
Manufacturers Vishay Intertechnology
Logo Vishay Intertechnology
Description N-Channel 40-V (D-S) Fast Switching MOSFET
Datasheet Si7444DP DatasheetSi7444DP Datasheet (PDF)

Si7444DP Vishay Siliconix www.DataSheet4U.com N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 23.6 rDS(on) (W) 0.0061 @ VGS = 10 V Qg (Typ) 105 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested D High Threshold Voltage At High Temperature PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7444DP-T1—E3 S N-Channel MOSFET ABSOLUTE.

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Si7444DP Vishay Siliconix www.DataSheet4U.com N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 23.6 rDS(on) (W) 0.0061 @ VGS = 10 V Qg (Typ) 105 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested D High Threshold Voltage At High Temperature PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7444DP-T1—E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 23.6 18.9 60 4.5 45 100 5.4 3.4 Steady State Unit V 14 11.2 A 1.6 mJ 1.9 1.2 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72920 S-42058—Rev. B, 15-Nov-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W 1 Si7444DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23.6 A VDS = 15 V, ID = 23.6 A IS = 4.5 A, VGS = 0 V 40 0.005 56 0.76 1.2 0.0061 3.4 4.5 "100 1 5 V nA mA A W S V www.DataSheet4U.com Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.5 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 0.5 VDS = 20 V, VGS = 10 V, ID = 23.6 A 105 39.4 21.7 1.0 45 30 90 45 45 1.5 70 45 135 70 70 ns W 160 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 50 40 30 20 10 5V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VGS = 10 thru 6 V 60 50 40 30 20 10 Transfer Characteristics I D − Drain Current (A) I D − Drain Current (A) TC = 125_C 25_C −55_C 2 3 4 5 6 7 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72920 S-42058—Rev. B, 15-Nov-04 2 Si7444DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.010 www.DataSheet4U.com On-Resistance vs. Drain Current 10000 Capacitance r DS(on) − On-Resistance ( W ) 0.008 C − Capacitance (pF) 8000 Ciss 0.006 VGS = 10 V 6000 0.004 4000 Coss Crss 0.002 2000 0.000 0 10 20 30 40 50 60 0 0 5 10 15 20 25 30 35 40 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 20 V ID = 23.6 A Gate Charge 1.8 1.6 rDS(on) − On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 23.6 A 8 6 4 2 0 0 20 40 60 80 100 120 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.040 0.035 r DS(on) − On-Resistance ( W ) On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 0.030 0.025 0.020 0.015 0.010 0.005 ID = 23.6 A TJ = 150_C 10 TJ = 25_C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72920 S-42058—Rev. B, 15-Nov-04 www.vishay.com 3 Si7444DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) −0.0 Power (W) −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −50 −25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 20 60 ID = 250 mA 80 100 www.DataSheet4U.com Single Pulse Power, Juncion-To-Ambient 40 TJ − Temperature (_C) 100 *rDS(on) Limited 10 I D − Drain Current (A) ID(on) Limited Safe Operating Area IDM Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 1 0.1 TA =.


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