Document
Si7444DP
Vishay Siliconix
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N-Channel 40-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
40
FEATURES
ID (A)
23.6
rDS(on) (W)
0.0061 @ VGS = 10 V
Qg (Typ)
105
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested D High Threshold Voltage At High Temperature
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm
D
4 D 8 7 D 6 D 5 D
G
G
Bottom View Ordering Information: Si7444DP-T1—E3
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
40 "20 23.6 18.9 60 4.5 45 100 5.4 3.4
Steady State
Unit
V
14 11.2 A 1.6
mJ 1.9 1.2 W _C
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72920 S-42058—Rev. B, 15-Nov-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 52 1.0
Maximum
23 65 1.3
Unit
_C/W
1
Si7444DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23.6 A VDS = 15 V, ID = 23.6 A IS = 4.5 A, VGS = 0 V 40 0.005 56 0.76 1.2 0.0061 3.4 4.5 "100 1 5 V nA mA A W S V
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Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.5 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 0.5 VDS = 20 V, VGS = 10 V, ID = 23.6 A 105 39.4 21.7 1.0 45 30 90 45 45 1.5 70 45 135 70 70 ns W 160 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60 50 40 30 20 10 5V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VGS = 10 thru 6 V 60 50 40 30 20 10
Transfer Characteristics
I D − Drain Current (A)
I D − Drain Current (A)
TC = 125_C 25_C −55_C 2 3 4 5 6 7
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 72920 S-42058—Rev. B, 15-Nov-04
2
Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
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On-Resistance vs. Drain Current
10000
Capacitance
r DS(on) − On-Resistance ( W )
0.008 C − Capacitance (pF)
8000
Ciss
0.006
VGS = 10 V
6000
0.004
4000 Coss Crss
0.002
2000
0.000 0 10 20 30 40 50 60
0 0 5 10 15 20 25 30 35 40
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
10 V GS − Gate-to-Source Voltage (V) VDS = 20 V ID = 23.6 A
Gate Charge
1.8 1.6 rDS(on) − On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 −50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 23.6 A
8
6
4
2
0 0 20 40 60 80 100 120 Qg − Total Gate Charge (nC)
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.040 0.035 r DS(on) − On-Resistance ( W )
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
0.030 0.025 0.020 0.015 0.010 0.005 ID = 23.6 A
TJ = 150_C 10
TJ = 25_C
1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
Document Number: 72920 S-42058—Rev. B, 15-Nov-04
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3
Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 0.4 0.2 V GS(th) Variance (V) −0.0 Power (W) −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −50 −25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 20 60 ID = 250 mA 80 100
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Single Pulse Power, Juncion-To-Ambient
40
TJ − Temperature (_C)
100 *rDS(on) Limited 10 I D − Drain Current (A) ID(on) Limited
Safe Operating Area
IDM Limited
P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1
1
0.1
TA =.