512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead ...
Description
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
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The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers of 8000/6400/4800 MB/s. XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed memory transactions. The highly efficient protocol yields over 95% utilization while allowing fine access granularity. The device's 8 banks support up to four interleaved transactions.
FEATURES
Highest pin bandwidth available − 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling − Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count − Programmable on-chip termination Adaptive impedance matching Reduced system cost and routing complexity Highest sustained bandwidth per DRAM device − − − − − 8000/6400/4800 MB/s sustained data rate 8 banks: bank-interleaved transactions at full bandwidth Dynamic r...
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