K1S3216BCC
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
www.DataSheet4U.com
Revision H...
K1S3216BCC
Document Title
2Mx16 bit Page Mode Uni-
Transistor Random Access Memory
UtRAM
www.DataSheet4U.com
Revision History
Revision No. History
1.0 2.0 Revised - Corrected tOH from 5ns to 3ns.
Draft Date
February 25, 2004
Remark
Final
September 20, 2004 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 2.0 September 2004
K1S3216BCC
2M x 16 bit Page Mode Uni-
Transistor CMOS RAM
FEATURES
UtRAM
www.DataSheet4U.com
GENERAL DESCRIPTION
The K1S3216BCC is fabricated by SAMSUNG′s advanced CMOS technology using one
transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7~2.1V Three State Outputs Compatible with Low Power SRAM Support 4 page read mode Package Type: 48-FBGA-6.00x8.00
PRODUCT FAMILY
Product Family Operating Temp. Vcc Range Speed (tRC) 70ns Power Dissipation Standby (ISB1, Max.) 100µA Operating (ICC2, Max.) 35mA PKG Type
K1S3216BCC-I
Industrial(-40~85°C)
1.7~2.1V
48-FBGA-6.00x8.00
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk ...