A1695

2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1695 –140 –140 –6 –10 –4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C www.DataSheet4U.com Application : Audio and General Purpose (Ta=25°C) 2SA1695 –10max –10max –140min 50min∗ –0.5max 20typ 400typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–140V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.5 IB2 (A) 0.5 ton (µs) 0.17typ tstg (µs) 1.86typ tf (µs) 0.27typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –10 –4 00 mA V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –10 (V C E =–4V) –3 0 A 0m –2 0 A 0m –15 0m A Collector Current I C (A) –100 mA –7 5m A –2 –6 Collector Current I C (A) –8 –8 –6 –50mA –4 –25mA mp) e Te –30˚C Tem (Ca se –1 I B =–10mA –5A 0 0 –0.5 –1.0 –1.5 –2.0 0 0 0 0 –1 –2 –3...