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BD302

Part Number	BD302
Manufacturer	Inchange Semiconductor Company Limited
Description	Silicon PNP Power Transistor
Published	Jun 12, 2010
Detailed Description	isc Silicon PNP Power Transistor BD302 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Bre...
Datasheet	BD302 PDF File

Overview

isc Silicon PNP Power Transistor BD302 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.
)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.
) ·Complement to Type BD301 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation ...

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