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BD3520FVM Dataheets PDF



Part Number BD3520FVM
Manufacturers Rohm
Logo Rohm
Description silicon monolithic integrated circuit
Datasheet BD3520FVM DatasheetBD3520FVM Datasheet (PDF)

STRUCTURE TYPE PRODUCT SERIES FEATURES Silicon Monolithic Integrated Circuit Single Channel Series Regulator Driver IC BD3520FVM ・Non Rush Current on Start up (NRCS) ・N channel MOSFET driver ・Output Voltage : 1.2V (±1%) ○ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Parameter Symbol Supply Voltage VCC Drain Voltage (VIN) VD Enable Input Voltage Ven Power Dissipation Pd Operating Temperature Range Topr Storage Temperature Range Tstg Maximum Junction Temperature Tjmax *1 Operating temperatu.

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STRUCTURE TYPE PRODUCT SERIES FEATURES Silicon Monolithic Integrated Circuit Single Channel Series Regulator Driver IC BD3520FVM ・Non Rush Current on Start up (NRCS) ・N channel MOSFET driver ・Output Voltage : 1.2V (±1%) ○ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Parameter Symbol Supply Voltage VCC Drain Voltage (VIN) VD Enable Input Voltage Ven Power Dissipation Pd Operating Temperature Range Topr Storage Temperature Range Tstg Maximum Junction Temperature Tjmax *1 Operating temperature range should not exceed Tjmax=150℃ *2 Pd derating at 3.5mW/℃ for temperature above Ta=25℃ Limit 7 *1 7 7 437.5 *2 -10~+100 -55~+150 +150 Unit V V V mW ℃ ℃ ℃ ○ RECOMMENDED OPERATING CONDITIONS(Ta=25℃) PARAMETER SYMBOL Supply Voltage VCC Drain Voltage(VIN) VD Enable Input Voltage Ven Capacitor on NRCS Terminal CNRCS ★ This product is not designed for protection against radioactive rays. MIN 4.5 1.2 -0.3 0.001 MAX 5.5 5.5 5.5 1 UNIT V V V uF 1/4 REV. A 2/4 ○ ELECTRICAL CHARACTERISTICS (Unless otherwise specified,Ta=25℃ VCC=5V VIN=3.3V Ven=3V) PARAMETER SYMBOL MIN LIMIT TYP Bias Current ICC - 0.85 Shut Down Mode Current IST - 0 Output Voltage 1 Vo1 1.188 1.200 MAX 1.7 10 1.212 Output Voltage 2 Vo2 1.176 1.200 1.224 Line Regulation Load Regulation [Enable] High Level Enable Input Voltage Low Level Enable Input Voltage Enable pin Input Current [Source Voltage] VS Input Bias Current VS Standby Current [Output MOSFET Driver] MOSFET Driver Source Current MOSFET Driver Sink Current [UVLO] VCC UVLO VCC UVLO Hysterisis VD UVLO [Drain Voltage Sensing] VD Input bias Current [NRCS/SCP] NRCS Charge Current SCP Charge Current SCP Discharge Current SCP Threshold Voltage Short Detect Voltage NRCS Stand-by Voltage (※) Design Guarantee Reg.l Reg.L - 0.1 0.5 0.5 10 Enhi 2 - Vcc Enlow Ien -0.3 - 7 0.8 10 ISBIAS - 1.2 2.4 ISSTB 150 - - IGSO 2 3 4 IGSI 2 3 4 VccUVLO 4.20 4.35 4.50 Vcchys 100 160 220 VDUVLO Vo×0.6 Vo×0.7 Vo×0.8 Ivd 10 16 22 Inrcs Iscpch IscpDi Vscp Voscp VSTB 14 14 0.3 1.2 Vo×0.3 - 20 20 1.3 Vo×0.35 - 26 26 1.4 Vo×0.4 50 UNIT CONDITIONS mA uA Ven=0V V Io=50mA Vcc=4.5V to 5.5V , V Ta=-10℃ to 100℃(※) %/V VCC=4.5V to 5.5V mV Io=0 to 3A V V uA Ven=3V mA mA VS=1V Ven=0V mA VFB=1.1V,VGATE=2.5V mA VFB=1.3V,VGATE=2.5V V Vcc:Sweep up mV Vcc:Sweep down V VD:Sweep up uA uA VNRCS=0.5V uA VNRCS=0.5V mA VNRCS=0.5V V V mV REV. A ○ PHYSICAL DIMENSIONS D35 20 1PIN MARK Lot No. 3/4 (UNIT:mm) MSOP8 ○ BLOCK DIAGRAM VCC C1 VCC 4 EN 3 Enable Reference Block Thermal Protection + - 0.65V UVLO2 UVLO1 VD UVLO LATCH NRCS 0.65V TSD SCP UVLO1 UVLO2 EN UVLO1 VREF EN TSD 0.65V + SCP SCP ○ Pin number Pin name VD 8 VIN C2 G 7 VS 6 VFB 5 VO C4 PIN PIN Name No. 1 NRCS 2 GND 3 EN 4 VCC 5 VFB 6 VS 7G 8 VD NRCS NRCS 1 NRCS C3 2 GND REV. A 4/4 ○NOTES FOR USE (1) Absolute maximum range Although the quality of this product is rigorously controlled, and circuit operation is guaranteed within the operation ambient temperature range, the device may be destroyed when applied voltage or operating temperature exceeds its absolute maximum rating. Because the failure mode (such as short mode or open mode) cannot be identified in this instance, it is important to take physical safety measures such as fusing if a specific mode in excess of absolute rating limits is considered for implementation. (2) Ground potential Make sure the potential for the GND pin is always kept lower than the potentials of all other pins, regardless of the operating mode, including transient conditions. (3) Thermal Design Provide sufficient margin in the thermal design to account for the allowable power dissipation (Pd) expected in actual use. (4) Using in the strong electromagnetic field Use in strong electromagnetic fields may cause malfunctions. (5) ASO Be sure that the output transistor for this IC does not exceed the absolute maximum ratings or ASO value. (6) Thermal Protection Circuit A thermal shutdown circuit (T.S.D) is built into the IC to prevent damage due to overheating. Therefore, all the outputs are turned off when the T.S.D circuit is activated. (This IC latches output to off mode when the temperature recedes to the specified level. To release latch mode, EN or UVLO is re-operated.) However, the T.S.D circuit is used only for extreme conditions, and the regulator circuit should still be designed for the IC not to exceed Tj(max)=150℃. (7) GND pattern When both a small-signal GND and high current GND are present, single-point grounding (at the set standard point) is recommended, in order to separate the small-signal and high current patterns, and to be sure the voltage change stemming from the wiring resistance and high current does not cause any voltage change in the small-signal GND. In the same way, care must be taken to avoid wiring pattern fluctuations in any connected external component GND. (8) Output Capacitor (C4) Mount an output capacitor betwe.


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