Si8419DB

Si8419DB New Product Vishay Siliconix www.DataSheet4U.com P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.035 @ VGS = −4.5 V −8 0.042 @ VGS = −2.5 V 0.052 @ VGS = −1.8 V 0.069 @ VGS = −1.5 V FEATURES ID (A)a −11.7 −10.7 −9.6 −8.3 21 nC Qg (Typ) Completely D TrenchFETr Power MOSFET Pb-free D Industry First 1.5-V Rated MOSFET D Ultra Small MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area Product Is APPLICATIONS D Low Threshold Load Switch for Portable Devices − Low Power Consumption − Increased Battery Life S MICRO FOOT Bump Side View 3 D D 2 Backside View G 8419 xxx Device Marking: 8419 xxx = Date/Lot Traceability Code D Ordering Information: Si8419DB-T1—E1 S 4 G 1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Source Drain Diode Current TC = 25_C TA = 25_C TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range Package Reflow Conditionsd VPR IR/Convection TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit −8 "5 −11.7 −9.4 −7.8b, c −6.3b, c −25 −5.7 −2.5b, c 6.25 4 2.77b, c 1.77b, c −55 to 150 260 260 Unit V A W _C Notes: a. Based on TC = 25_C. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 10 sec d. Refer to IPC/JEDEC (J-S...