SiE802DF

SiE802DF New Product Vishay Siliconix www.DataSheet4U.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID VDS (V) 30 FEATURES (A)a Package Limit 60 60 rDS(on) (W)e 0.0019 @ VGS = 10 V 0.0026 @ VGS = 4.5 V Silicon Limit 202 173 Qg (Typ) 50 nC Package Drawing PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 D TrenchFETr Gen II Power MOSFET D Ultra Low Thermal Resistance Using Top-Exposed PolarPAKr Package for RoHS COMPLIANT Double-Sided Cooling D Leadframe-Based New Encapsulated Package – Die Not Exposed – Same Layout Regardless of Die Size D Low Qgd/Qgs Ratio Helps Prevent Shoot-Through D 100% Rg and UIS Tested APPLICATIONS D VRM D DC/DC Conversion: Low-Side D Synchronous Rectification D D S G D D D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 G Bottom View S N-Channel MOSFET For Related Documents Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE802DF-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Source Drain Diode Current Single Pulse Avalanche Current Avalanche Energy L=0 0.1 1 mH TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25_C TA = 25_C IDM IS IAS EAS ID Symbol VDS VGS Limit 30 "20 202 (Silic...