M58LR256GU

www.DataSheet4U.com M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access: 85ns (M58LR128GU/L) 90ns (M58LR256GU/L) Synchronous Burst Read Suspend Programming time – 10µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank Memory Array: 16 Mbit (M58LR256GU/L) or 8 Mbit (M58LR128GU/L) Banks – Parameter Blocks (Top or Bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS Security – 64 bit unique device number – 2112 bit user programmable OTP Cells Common Flash Interface (CFI) ■ ■ FBGA ■ ■ VFBGA44 (ZC) 8 x 10mm VFBGA44 (ZB) 7.7 x 9mm ■ ■ 100,000 program/erase cycles per block Electronic signature – Manufacturer Code: 20h – Top Device Codes: M58LR256GU: 882Ch M58LR128GU: 882Eh – Bottom Device Codes M58LR256GL: 882Dh M58LR128GL: 882Fh ECOPACK® packages available ■ ■ ■ ■ ■ ■ June 2006 Rev 1 1/114 www.st.com 1 www.DataSheet4U.com Co...