FQD6N60C 600V N-Channel MOSFET
QFET
FQD6N60C
600V N-Channel MOSFET
Features
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V ...
FQD6N60C 600V N-Channel MOSFET
QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested www.DataSheet4U.com Improved dv/dt capability
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Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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D-PAK
FQD Series
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD6N60C
600 4 2.4 16 ± 30 300 4.0 8.0 4.5 80 0.78 -55 to +150 300
Units
V A A A V mJ A mJ V/ns W W/°C °C °C
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