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MRF5S9150HR3 Dataheets PDF



Part Number MRF5S9150HR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Datasheet MRF5S9150HR3 DatasheetMRF5S9150HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1..

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Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 28.4% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters www.DataSheet4U.com • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S9150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S9150HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +15 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW Case Temperature 76°C, 33 W CW Symbol RθJC Value (1) 0.34 0.34 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9150HR3 MRF5S9150HSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.15 Adc) www.DataSheet4U.com Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) 2 3 0.1 3 4 0.2 4 5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nAdc Symbol Min Typ Max Unit Crss Coss — — 3.1 91.5 — — pF pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps ηD ACPR IRL 18.5 26.5 — — 19.7 28.4 - 46.8 - 20 21.5 — - 45 -9 dB % dBc dB MRF5S9150HR3 MRF5S9150HSR3 2 RF Device Data Freescale Semiconductor VBIAS + C14 B1 VSUPPLY R2 R1 C16 C17 L1 Z9 C8 C10 Z10 Z11 Z12 Z13 Z14 Z15 Z16 C2 C7 C3 C4 C5 DUT C9 L3 C11 C12 C13 Z17 C18 C19 L2 RF OUTPUT C20 C21 + C22 C15 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 C6 Z8 VSUPPLY + C23 C24 C25 C26 C27 www.DataSheet4U.com Z1 Z2 Z3, Z17 Z4 Z5 Z6 Z7 Z8 Z9 0.416″ x 0.080″ Microstrip 0.851″ x 0.080″ Microstrip 0.410″ x 0.080″ Microstrip 0.055″ x 0.220″ Microstrip 0.434″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.630″ Taper 0.077″ x 0.630″ Microstrip 0.221″ x 0.630″ Microstrip 0.193″ x 0.630″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.105″ x 0.630″ Microstrip 0.200″ x 0.630″ x 0.220″ Taper 0.236″ x 0.220″ Microstrip 0.195″ x 0.220″ Microstrip 0.059″ x 0.220″ Microstrip 0.989″ x 0.080″ Microstrip 0.284″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF5S9150HR3(HSR3) Test Circuit Schematic Table 5. MRF5S9150HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1, C2, C17 C3, C12 C4 C5, C6 C7, C8 C9, C10 C11 C13 C14 C15 C16 C18, C23 C19, C20, C21, C24, C25, C26 C22, C27 L1, L2, L3 R1 R2 Description Small Ferrite Bead 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 13 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor.


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