MRF5S9100NR1

Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 28% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power Features www.DataSheet4U.com Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200°C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9100NR1 MRF5S9100NBR1 880 MHz, 20 W AVG., 26 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9100NBR1 Table 1. Maximum Ratings Rating Drai...