MRF5S9080NR1

Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain — 18.5 dB Drain Efficiency — 60% GSM EDGE Application Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain — 19 dB www.DataSheet4U.com Drain Efficiency — 42% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 2.5% rms Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200_C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ MRF5S9080NR1 MRF5S9080NBR1 869 - 960 MHz, 80 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE...